unisonic technologies co., ltd pzta42/43 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r207-005.e high voltage transistor ? description the utc pzta42/43 are high voltage transistors, designed for telephone switch and high voltage switch. ? features * collector-emitter voltage: v ceo =300v (utc pzta42) v ceo =200v (utc pzta43) * high current gain * complement to utc pzta92/93 * collector power dissipation: p c ( max ) =1w sot-223 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 pzta42l-aa3-r PZTA42G-AA3-R sot-223 b c e tape reel pzta43l-aa3-r pzta43g-aa3-r sot-223 b c e tape reel
pzta42/43 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r207-005.e ? absolute maximum ratings (t a =25c) parameter symbol ratings unit collector-base voltage pzta42 v cbo 300 v pzta43 200 v collector-emitter voltage pzta42 v ceo 300 v pzta43 200 v emitter-base voltage v ebo 6 v collector current i c 500 ma collector power dissipation pc 1 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note : absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =100 a, i e =0 pzta42 300 v pzta43 200 v collector-emitter breakdown voltage bv ceo i c =1ma, i b =0 pzta42 300 v pzta43 200 v emitter-base breakdown voltage bv ebo i e =100 a, i c =0 6 v collector cut-off current i cbo v cb =200v, i e =0 pzta42 100 na v cb =160v, i e =0 pzta43 100 na emitter cut-off current i ebo v be =6v, i c =0 pzta42 100 na v be =4v, i c =0 pzta43 100 na dc current gain h fe v ce =10v, i c =1ma 80 v ce =10v, i c =10ma 80 300 v ce =10v, i c 30ma 80 collector-emitter satu ration voltage v ce ( sat ) i c =20ma, i b =2ma 0.2 v base-emitter satura tion voltage v be ( sat ) i c =20ma, i b =2ma 0.90 v current gain bandwidth product f t v ce =20v, i c =10ma, f=100mhz 50 mhz collector base capacitance c cb v cb =20v, i e =0, f=1mhz pzta42 3 pf pzta43 4 pf
pzta42/43 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r207-005.e ? typical characteristics dc current gain, h fe v ce(sat) , v be(sat) (v) current gain bandwidth product (mhz) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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